VS-GB100TH120U
IGBT MOD 1200V 200A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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The Vishay General Semiconductor - Diodes Division VS-GB100TH120U is a NPT Half Bridge IGBT Module. This device features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 200 A. With a power dissipation capability of 1136 W, it is designed for demanding applications. The module offers a low Vce(on) of 3.6V at 15V Vge and 100A Ic. Input capacitance (Cies) is rated at 8.45 nF at 20V. It is housed in a Double INT-A-PAK package for chassis mounting, suitable for operation across an extended temperature range of -40°C to 150°C (TJ). Applications for this component include industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1136 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 8.45 nF @ 20 V |
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