VS-GB100TH120N
IGBT MOD 1200V 200A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GB100TH120N is a Half Bridge IGBT Module designed for robust power applications. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 200 A. With a power dissipation rating of 833 W, it is engineered for demanding thermal environments. The module utilizes a Double INT-A-PAK package for efficient chassis mounting. Key electrical characteristics include a Vce(on) of 2.35V at 15V Vge and 100A Ic, and an input capacitance (Cies) of 8.58 nF at 25 V. The operating junction temperature is rated up to 150°C. This component is suitable for power conversion systems in industrial and high-power motor control sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 833 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 8.58 nF @ 25 V |
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