VS-GB100LP120N
IGBT MOD 1200V 200A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GB100LP120N is a single IGBT module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 200 A. The module offers a typical on-state voltage (Vce(on)) of 1.8 V at 15 V gate-emitter voltage and 100 A collector current. With a maximum power dissipation of 658 W and an operating temperature range of -40°C to 150°C, it is suitable for demanding environments. The VS-GB100LP120N utilizes the INT-A-PAK package for chassis mounting, facilitating efficient thermal management. This IGBT module is commonly employed in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 100A (Typ) |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 658 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 7.43 nF @ 25 V |
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