VS-GA200TH60S
IGBT MOD 600V 260A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division VS-GA200TH60S is a high-performance IGBT module featuring a Half Bridge configuration. This module offers a 600V collector-emitter breakdown voltage and a maximum collector current of 260A. With a power dissipation capability of 1042W, it is well-suited for demanding applications. The device is housed in a Double INT-A-PAK package for efficient chassis mounting. Key electrical parameters include a typical Vce(on) of 1.9V at 15V Vge and 200A Ic, and an input capacitance (Cies) of 13.1 nF at 25V. The operating temperature range is -40°C to 150°C (TJ). This component is commonly utilized in industrial motor drives, renewable energy systems, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A (Typ) |
| NTC Thermistor | No |
| Supplier Device Package | Double INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 260 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 1042 W |
| Current - Collector Cutoff (Max) | 5 µA |
| Input Capacitance (Cies) @ Vce | 13.1 nF @ 25 V |
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