VS-GA100TS120UPBF
IGBT MOD 1200V 182A INT-A-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division presents the VS-GA100TS120UPBF, an IGBT Module featuring a Half Bridge configuration. This module offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 182 A. With a maximum power dissipation of 520 W, it is suitable for demanding applications. The module exhibits a typical Vce(on) of 3V at 15V gate-emitter voltage and 100A collector current. Input capacitance (Cies) is rated at 18.67 nF at 30V. Designed for chassis mounting, it utilizes the INT-A-PAK package. Operating temperature ranges from -40°C to 150°C. This component finds application in motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | INT-A-PAK |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | INT-A-PAK |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 182 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 520 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 18.67 nF @ 30 V |
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