GB35XF120K
IGBT MODULE 1200V 50A 284WManufacturer: Vishay General Semiconductor - Diodes Division
Categories: IGBT Modules
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Vishay General Semiconductor - Diodes Division GB35XF120K is a high-performance NPT IGBT module designed for three-phase inverter applications. This chassis-mount module offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a maximum power dissipation of 284 W. The GB35XF120K features a low on-state voltage of 3V at 15V gate-emitter voltage and 50A collector current, minimizing conduction losses. Its input capacitance (Cies) is 3.475 nF at 30 V. Operating at junction temperatures up to 150°C, this module is suitable for demanding power conversion systems in industrial motor drives, renewable energy, and power supply applications. The ECONO2 package ensures efficient thermal management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging:Download Free CAD Model:
Technical Details:
| Packaging | |
| Package / Case | ECONO2 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | - |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 284 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 3.475 nF @ 30 V |
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