19MT050XF
MOSFET 4N-CH 500V 31A 16MTPManufacturer: Vishay General Semiconductor - Diodes Division
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division HEXFET® 19MT050XF is a 4 N-channel MOSFET array, configured as a full bridge. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 31A at 25°C. The Rds On is specified at a maximum of 220mOhm at 19A, 10V. Key parameters include a Gate Charge (Qg) of 160nC at 10V and an Input Capacitance (Ciss) of 7210pF at 25V. With a maximum power dissipation of 1140W and an operating temperature range of -40°C to 150°C, this MOSFET array is suitable for chassis mounting. The 16-MTP Module package is supplied in bulk. This component is utilized in power supply applications and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 16-MTP Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1140W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 31A |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 6V @ 250µA |
| Supplier Device Package | 16-MTP |
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