VS-HFA200FA120P
DIODE MOD GP 1.2KV 100A SOT227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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The Vishay General Semiconductor - Diodes Division HEXFRED® VS-HFA200FA120P is a dual independent diode module featuring a 1200 V reverse voltage and a 100 A average rectified current per diode. This device utilizes a fast recovery technology, with a typical reverse recovery time (trr) of 150 ns. It exhibits a forward voltage drop (Vf) of 3.6 V at 100 A and a reverse leakage current of 75 µA at 1200 V. The VS-HFA200FA120P is housed in a SOT-227-4, miniBLOC package for chassis mounting, ensuring efficient thermal management. Operating across a junction temperature range of -55°C to 150°C, this diode array is suitable for applications in industrial power supplies, electric vehicle charging, and motor control systems.
Additional Information
Series: HEXFRED®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 100A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 3.6 V @ 100 A |
| Current - Reverse Leakage @ Vr | 75 µA @ 1200 V |
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