UGB8JCT-E3/81
DIODE ARRAY GP 600V 4A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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The Vishay General Semiconductor - Diodes Division UGB8JCT-E3-81 is a dual diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 600 V and an average rectified forward current of 4 A per diode. The forward voltage drop is specified at a maximum of 1.75 V at 4 A. With a reverse leakage current of 30 µA at 600 V, this diode array is suitable for applications requiring fast recovery characteristics, with a typical reverse recovery time (trr) of 50 ns. The UGB8JCT-E3-81 is housed in a TO-263AB (D2PAK) surface mount package, facilitating efficient board assembly. Its operating junction temperature range is -55°C to 150°C. This device finds application in power supply rectification and switching power supplies across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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