UGB8HCT-E3/81
DIODE ARRAY GP 500V 4A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division UGB8HCT-E3-81 is a diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 500 V and an average rectified forward current per diode of 4 A. The forward voltage drop at the maximum current is 1.75 V. It exhibits a reverse leakage current of 30 µA at 500 V. With a reverse recovery time of 50 ns, this device is classified under fast recovery diodes. The UGB8HCT-E3-81 is designed for surface mounting within a TO-263-3, D2PAK package. Operating junction temperatures range from -55°C to 150°C. This Vishay General Semiconductor - Diodes Division component is utilized in power supply rectification and high-frequency switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 500 V |
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