UGB15JT-E3H/I
DIODE ARRAY GP 600V TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division UGB15JT-E3H-I is a high-performance diode array featuring a 600V reverse voltage rating. This device is housed in a TO-263AB (D2PAK) surface-mount package, offering efficient thermal management. With a maximum forward voltage of 1.75V at 15A and a reverse leakage of 30 µA at 600V, it demonstrates robust performance. The UGB15JT-E3H-I has a reverse recovery time (trr) of 50 ns, classifying it as a fast recovery diode suitable for applications requiring high switching speeds. This component finds utility in power supply rectification, inverters, and motor control circuits within the industrial and automotive sectors. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 15 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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