UG8JCT-E3/45
DIODE ARRAY GP 600V 4A TO220-3Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division UG8JCT-E3-45 is a diode array featuring one pair of common cathode diodes. This component offers a maximum DC reverse voltage (Vr) of 600 V and an average rectified current (Io) per diode of 4 A. The forward voltage (Vf) is a maximum of 1.75 V at 4 A. The reverse leakage current at Vr is a low 30 µA @ 600 V. It is designed for high-speed applications with a reverse recovery time (trr) of 50 ns, qualifying it as Fast Recovery. The device is housed in a TO-220-3 package with through-hole mounting. Operating junction temperatures range from -55°C to 150°C. This diode array is commonly utilized in power supply rectification and general-purpose switching applications across industries such as industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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