FES8JT-5410HE3/45
DIODE ARRAY GP 600V TO220ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division FES8JT-5410HE3-45 is a dual diode array designed for high-reliability applications. This component features a 600V reverse voltage rating and a 1.5V maximum forward voltage at 8A. The array offers a fast recovery time of 50 ns, suitable for applications requiring efficient switching. With a reverse leakage current of 10 µA at 600V, it ensures minimal power dissipation. The FES8JT-5410HE3-45 is housed in a TO-220AC package, facilitating through-hole mounting. This diode array meets AEC-Q101 qualification standards, making it suitable for the automotive industry. Its operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
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