FEPB6DT-E3/81
DIODE ARRAY GP 200V 6A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division presents the FEPB6DT-E3-81, a diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 200V and an average rectified current of 6A per diode. The forward voltage drop is specified at 975mV with a forward current of 3A. With a reverse leakage current of 5 µA at 200V and a reverse recovery time of 35 ns, this device is suitable for fast recovery applications. The FEPB6DT-E3-81 is housed in a TO-263AB (D2PAK) surface mount package, designed for efficient thermal management. Operating junction temperatures range from -55°C to 150°C. This Vishay General Semiconductor diode array is commonly utilized in power supply rectification, switching power supplies, and high-frequency inverters across various industrial applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 6A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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