FEPB16JT-E3/81
DIODE ARRAY GP 600V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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The Vishay General Semiconductor - Diodes Division FEPB16JT-E3-81 is a dual diode array featuring a common cathode configuration. This surface mount component, housed in a TO-263AB (D2PAK) package, offers a maximum DC reverse voltage of 600V. Each diode in the array supports an average rectified current (Io) of 8A, with a typical forward voltage (Vf) of 1.5V at 8A. The reverse leakage current is rated at 10 µA at 600V. With a fast recovery time (trr) of 50 ns, this component is suitable for applications requiring efficient rectification. The operating junction temperature range is -55°C to 150°C. This diode array is commonly utilized in power supply rectification, motor drive control, and photovoltaic inverter circuits. The FEPB16JT-E3-81 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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