FEPB16DT-E3/45
DIODE ARRAY GP 200V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division presents the FEPB16DT-E3-45, a diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 200V and a forward voltage of 950mV at 8A. The average rectified current per diode is 8A, with a reverse leakage of 10 µA at 200V. Its fast recovery time (trr) is 35 ns. The FEPB16DT-E3-45 is designed for surface mounting in a TO-263-3, D2PAK package. Operating junction temperatures range from -55°C to 150°C. This diode array is suitable for applications in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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