FEPB16BT-E3/45
DIODE ARRAY GP 100V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division FEPB16BT-E3-45 is a diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 100 V and an average rectified current per diode of 8 A. The forward voltage (Vf) is specified at 950 mV at 8 A. With a reverse leakage current of 10 µA at 100 V, and a reverse recovery time (trr) of 35 ns, this diode array is suitable for fast switching applications. It is housed in a TO-263AB (D2PAK) surface mount package, designed for operation across a junction temperature range of -55°C to 150°C. This device finds application in power supply rectification, output rectification, and switching power applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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