FEP16DT-33HE3/45
DIODE ARRAY GP 200V 16A TO220-3Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division FEP16DT-33HE3-45 is a fast-recovery diode array featuring a common cathode configuration. This AEC-Q101 qualified component provides 200V reverse voltage capability with a maximum forward voltage of 1.3V at 8A. Each diode in the array handles an average rectified current of 16A and exhibits a reverse leakage of 10µA at 200V. The device boasts a reverse recovery time of 35ns. Packaged in a TO-220-3 through-hole configuration, it operates across a junction temperature range of -55°C to 150°C. This diode array is suitable for automotive applications requiring efficient rectification and fast switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 16A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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