FEP16BT/45
DIODE ARRAY GP 100V 16A TO220-3Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division FEP16BT-45 is a fast recovery diode array featuring a common cathode configuration. This component is rated for a maximum repetitive peak reverse voltage (Vrrm) of 100V and an average rectified forward current (Io) of 16A per diode. The Vishay General Semiconductor - Diodes Division FEP16BT-45 exhibits a forward voltage drop (Vf) of 950mV at 8A and a reverse leakage current of 10µA at 100V. With a reverse recovery time (trr) of 35ns, it is suitable for applications requiring efficient rectification. The device is housed in a TO-220-3 package for through-hole mounting. This diode array is commonly employed in power supply rectification, high-frequency switching, and general-purpose power applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 16A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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