BYVB32-200-E3/81
DIODE ARRAY GP 200V 18A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
Quality Control: Learn More
The Vishay General Semiconductor - Diodes Division BYVB32-200-E3-81 is a dual diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 200V and supports an average rectified current of 18A per diode. The forward voltage drop is rated at a maximum of 1.15V at 20A. Engineered for surface mounting, it utilizes the TO-263AB (D2PAK) package. Operating junction temperatures range from -65°C to 150°C. This device exhibits a reverse leakage current of 10 µA at 200V and a typical reverse recovery time of 25 ns, classifying it as a fast recovery diode. Applications include power supplies, automotive electronics, and industrial power conversion. The BYVB32-200-E3-81 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
Request a Quote
Clients Also Buy
VS-12CTQ035SPBF
DIODE ARR SCHOTT 35V 6A TO263AB
VS-MBR2080CT-1PBF
DIODE ARR SCHOTT 80V 10A TO262-3
VI30120C-E3/4W
DIODE ARR SCHOT 120V 15A TO262AA
