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BYVB32-200-E3/45

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BYVB32-200-E3/45

DIODE ARRAY GP 200V 18A TO263AB

Manufacturer: Vishay General Semiconductor - Diodes Division

Categories: Diode Arrays

Quality Control: Learn More

The Vishay General Semiconductor - Diodes Division BYVB32-200-E3-45 is a dual diode array featuring a common cathode configuration. This surface mount component, housed in a TO-263AB (D2PAK) package, offers a maximum DC reverse voltage of 200V. Each diode in the array can handle an average rectified current of 18A, with a typical forward voltage drop of 1.15V at 20A. The reverse leakage current is rated at 10 µA at 200V. With a fast reverse recovery time of 25 ns, this device is suitable for applications requiring efficient switching. The operating junction temperature range is -65°C to 150°C. This component finds application in power supply rectification and high-frequency switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25 ns
TechnologyStandard
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)18A
Supplier Device PackageTO-263AB (D2PAK)
Operating Temperature - Junction-65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.15 V @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 200 V

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