BYVB32-150-E3/81
DIODE ARRAY GP 150V 18A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division BYVB32-150-E3-81 is a diode array featuring a common cathode configuration. This component offers a reverse voltage rating of 150 V and an average rectified current of 18 A per diode. With a fast recovery time of 25 ns, it is suitable for applications requiring efficient switching. The forward voltage drop is a maximum of 1.15 V at 20 A. Packaged in a TO-263AB (D2PAK) surface mount configuration, this device is designed for high-volume manufacturing. The operating junction temperature range is from -65°C to 150°C. Reverse leakage current is specified at 10 µA at 150 V. This diode array is commonly utilized in power supply rectification, automotive electronics, and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
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