BYVB32-100-E3/81
DIODE ARRAY GP 100V 18A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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Vishay General Semiconductor - Diodes Division BYVB32-100-E3-81 is a dual diode array featuring a common cathode configuration. This surface mount device, housed in a TO-263AB (D2PAK) package, offers a reverse voltage rating of 100V and an average rectified current of 18A per diode. With a forward voltage of 1.15V at 20A and a reverse leakage of 10 µA at 100V, this component is suitable for applications requiring fast recovery characteristics, specified at 25 ns. The operating junction temperature range is -65°C to 150°C. This diode array is commonly utilized in power supply rectification and switching applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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