BYV32-200HE3/45
DIODE ARRAY GP 200V 18A TO220-3Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Diode Arrays
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The Vishay General Semiconductor - Diodes Division BYV32-200HE3-45 is a dual diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 200V and an average rectified current of 18A per diode. With a fast reverse recovery time of 25ns, it is suitable for applications requiring high-speed switching. The forward voltage drop is a maximum of 1.15V at 20A. This through-hole device is packaged in a TO-220-3 configuration and operates across a junction temperature range of -65°C to 150°C. Qualified to AEC-Q101 standards, it finds application in automotive power supply and rectification circuits. The reverse leakage current is a low 10 µA at 200V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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