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2N5796U

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2N5796U

TRANS 2PNP 60V 0.6A 6CLCC

Manufacturer: TT Electronics/Optek Technology

Categories: Bipolar Transistor Arrays

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TT Electronics/Optek Technology presents the 2N5796U, a dual PNP bipolar junction transistor array. This RoHS compliant device offers a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, it is suitable for applications requiring precise amplification. The transistor exhibits a Vce saturation of 1.6V at 50mA and 500mA, with a collector cutoff current (ICBO) of 10nA. Rated for a maximum power dissipation of 600mW, the 2N5796U operates within a temperature range of -65°C to 200°C. It is supplied in a 6-lead ceramic chip carrier (CLCC) package suitable for surface mounting. This component finds application in industrial, defense, and aerospace sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-CLCC
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package6-CLCC

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