TPH3212PS
GANFET N-CH 650V 27A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm TPH3212PS, a 650V N-Channel GaNFET, offers a continuous drain current of 27A at 25°C (Tc) and a maximum power dissipation of 104W (Tc). This through-hole component in a TO-220AB package features a low on-resistance of 72mOhm at 17A and 8V. Key parameters include a gate charge of 14 nC at 8V and input capacitance of 1130 pF at 400V. Designed for high-performance applications, this device is suitable for power supply units, motor drives, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage up to ±18V.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 17A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 400uA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 400 V |
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