TPH3208PS
GANFET N-CH 650V 20A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm GaNFET TPH3208PS is an N-Channel, 650V device packaged in a TO-220AB through-hole configuration. This component offers a continuous drain current of 20A at 25°C with a maximum power dissipation of 96W. Key electrical parameters include a drain-to-source voltage (Vdss) of 650V and a low on-resistance (Rds On) of 130mOhm at 13A and 8V. The gate charge (Qg) is specified at 14 nC maximum at 8V, with an input capacitance (Ciss) of 760 pF maximum at 400V. The device supports a gate-source voltage (Vgs) range of ±18V and a threshold voltage (Vgs(th)) of 2.6V maximum at 300µA, with a drive voltage of 10V for maximum Rds On. Operating temperature ranges from -55°C to 150°C. This GaNFET is suitable for applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
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