TPH3208PD
GANFET N-CH 650V 20A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Transphorm TPH3208PD is a 650 V, N-Channel GaNFET designed for high-efficiency power conversion applications. This component offers a continuous drain current of 20A (Tc) and a maximum power dissipation of 96W (Tc). Key parameters include a low on-resistance of 130mOhm at 13A and 8V, a gate charge (Qg) of 14 nC at 8V, and input capacitance (Ciss) of 760 pF at 400V. The TPH3208PD features a TO-220AB through-hole package, making it suitable for robust power designs. It operates across a temperature range of -55°C to 150°C and supports a maximum gate-source voltage of ±18V. This device is utilized in power supply units, electric vehicle chargers, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
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