TPH3208LSG
GANFET N-CH 650V 20A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm TPH3208LSG is a 650 V N-Channel GaNFET designed for high-efficiency power conversion applications. This device features a maximum continuous drain current of 20A (Tc) and a maximum power dissipation of 96W (Tc). The on-resistance (Rds On) is specified at 130mOhm at 14A and 8V Vgs. Key parameters include a gate charge (Qg) of 42 nC (Max) @ 8 V and input capacitance (Ciss) of 760 pF (Max) @ 400 V. The TPH3208LSG utilizes a 3-PQFN (8x8) surface mount package, facilitating compact designs. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor drives, and other demanding power electronics applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
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