TPH3208LS
GANFET N-CH 650V 20A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm TPH3208LS GaNFET, N-Channel, 650V, 20A continuous drain current. This surface mount device features a 3-PQFN (8x8) package and offers a low Rds(on) of 130mOhm at 13A, 8V. Key parameters include a Vgs(th) of 2.6V at 300µA, a maximum gate charge of 14 nC at 8V, and input capacitance of 760 pF at 400V. The device operates across a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 96W. Applications include high-voltage power conversion in data centers, renewable energy systems, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
Request a Quote
Clients Also Buy
TP65H070G4PS
GANFET N-CH 650V 29A TO220
TPH3206PSB
GANFET N-CH 650V 16A TO220AB
TP65H300G4LSGB-TR
GANFET N-CH 650V 6.5A QFN8X8
