TPH3208LD
GANFET N-CH 650V 20A 4PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm's TPH3208LD is a 650V N-Channel GaNFET designed for high-efficiency power conversion applications. This surface mount component features a low on-resistance of 130mOhm (max) at 13A and 8V Vgs, with a continuous drain current capability of 20A (Tc). The device offers a gate charge of 14 nC (max) and input capacitance of 760 pF (max), contributing to its fast switching performance. Packaged in a 4-PQFN (8x8) configuration, it supports a maximum power dissipation of 96W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). The TPH3208LD is suitable for use in power factor correction, AC-DC converters, and DC-DC converters within the IT, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Supplier Device Package | 4-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
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