TPH3207WS
GANFET N-CH 650V 50A TO247-3Manufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm GaNFET N-Channel, 650V, 50A TPH3207WS. This through-hole component features a 650V drain-source breakdown voltage and a continuous drain current of 50A at 25°C (Tc). With a maximum on-resistance of 41mOhm at 32A and 8V, and a gate charge of 42 nC at 8V, it offers efficient switching performance. The device has a maximum power dissipation of 178W (Tc) and operates within an ambient temperature range of -55°C to 150°C (TJ). The TO-247-3 package is suitable for demanding applications in power conversion, industrial automation, and electric vehicle charging infrastructure. Key parameters include a maximum gate-source voltage of ±18V and a threshold voltage of 2.65V at 700µA.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 12 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 2.65V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2197 pF @ 400 V |
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