TPH3206PSB
GANFET N-CH 650V 16A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm TPH3206PSB is a 650V N-channel GaNFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 16A at 25°C and a maximum power dissipation of 81W (Tc). The Rds(On) is specified at 180mOhm maximum at 10A and 8V Vgs. With a gate charge (Qg) of 6.2 nC (max) at 4.5V and input capacitance (Ciss) of 720 pF (max) at 480V, the TPH3206PSB offers enhanced switching performance. It is packaged in a TO-220AB through-hole package, facilitating ease of integration into existing designs. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for use in power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
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