TPH3206PS
GANFET N-CH 600V 17A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm GaNFET N-Channel power transistor, part number TPH3206PS. This device offers a 600V drain-source voltage and a continuous drain current of 17A (Tc) at 25°C. The TPH3206PS features low on-resistance of 180mOhm maximum at 11A, 8V, and a gate charge of 9.3 nC maximum at 4.5V. Maximum power dissipation is 96W (Tc). It is housed in a standard TO-220AB package for through-hole mounting. Key parameters include an input capacitance (Ciss) of 760pF maximum at 480V and a gate threshold voltage (Vgs(th)) of 2.6V maximum at 500µA. The operating junction temperature range is -55°C to 175°C. This component is suitable for applications in power conversion for data centers, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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