TPH3206LSGB
GANFET N-CH 650V 16A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm GaNFET N-Channel TPH3206LSGB is a 650V device with a continuous drain current rating of 16A at 25°C. This surface mount component is housed in a 3-PQFN (8x8) package. Key electrical specifications include a maximum on-resistance of 180mOhm at 10A and 8V, a gate charge of 6.2 nC at 4.5V, and input capacitance of 720 pF at 480V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 81W at 25°C (Tc). This GaNFET technology is utilized in applications such as power supplies, adapters, and industrial power conversion.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
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