TPH3206LSB
GANFET N-CH 650V 16A PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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The Transphorm TPH3206LSB is a 650 V, 16 A (Tc) N-channel GaNFET, packaged in a 3-PQFN (8x8) surface mount configuration. This device offers a maximum continuous drain current of 16 A at 25°C with a continuous drain to source voltage of 650 V. Key performance parameters include a maximum Rds(On) of 180 mOhm at 10 A and 8 V, and a typical gate charge (Qg) of 6.2 nC at 4.5 V. The input capacitance (Ciss) is specified at a maximum of 720 pF at 480 V. With a maximum power dissipation of 81 W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the TPH3206LSB is suitable for high-efficiency power conversion applications. This component is utilized in industries such as data centers, industrial power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
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