TPH3206LDGB
GANFET N-CH 650V 16A PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm's TPH3206LDGB is a 650 V N-Channel GaNFET designed for high-efficiency power conversion. This device offers a continuous drain current of 16A at 25°C (Tc) and a maximum power dissipation of 81W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 650 V, a low on-resistance (Rds On) of 180mOhm at 11A and 8V, and a gate charge (Qg) of 9.3 nC at 4.5V. Input capacitance (Ciss) is rated at 760 pF at 480 V. The TPH3206LDGB features a 3-PQFN (8x8) surface mount package, operating across a temperature range of -55°C to 150°C (TJ). It is suitable for applications in power supplies, electric vehicle chargers, and data center power.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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