TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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The Transphorm TPH3206LDG-TR is a 600V N-Channel GaNFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 180mOhm at 8V Vgs and 11A Id, contributing to reduced conduction losses. With a continuous drain current capability of 17A (Tc) and a maximum power dissipation of 96W (Tc), the TPH3206LDG-TR is suitable for demanding power supply designs. The component utilizes a 3-PQFN (8x8) package, facilitating surface mounting and thermal management. Key electrical parameters include a gate charge (Qg) of 9.3 nC at 4.5V Vgs and input capacitance (Ciss) of 760 pF at 480V Vds. This GaNFET is engineered for use in industries such as automotive, industrial power, and data center power supplies. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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