TPH3206LDB
GANFET N-CH 650V 16A PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm TPH3206LDB is a 650V N-Channel GaNFET designed for high-efficiency power conversion. This component offers a continuous drain current of 16A (Tc) with a maximum power dissipation of 81W (Tc). Featuring a low Rds(on) of 180mOhm at 10A and 8V, and a gate charge of 6.2nC at 4.5V, it is suitable for demanding applications. The device operates with a drive voltage of 10V and has a Vgs(th) of 2.6V at 500µA, with a maximum Vgs of ±18V. Its input capacitance (Ciss) is 720pF at 480V. Packaged in a 4-PQFN (8x8) surface mount configuration, the TPH3206LDB is ideal for use in server power, industrial power supplies, and electric vehicle charging. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 4-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
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