TPH3206LD
GANFET N-CH 600V 17A PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm's TPH3206LD is a 600V N-Channel GaNFET housed in an 8x8mm 4-PQFN package. This device offers a continuous drain current capability of 17A (Tc) and a maximum power dissipation of 96W (Tc). Key electrical characteristics include a low on-resistance of 180mOhm at 11A and 8V Vgs, with a Vgs(th) of 2.6V at 500µA. The gate charge (Qg) is 9.3 nC at 4.5V Vgs, and input capacitance (Ciss) is 760 pF at 480V Vds. Designed for demanding applications, this surface mount component operates across a temperature range of -55°C to 175°C (TJ). Its performance makes it suitable for power conversion in sectors such as automotive, industrial, and data centers.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | 4-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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