TPH3205WSBQA
GANFET N-CH 650V 35A TO247-3Manufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm's TPH3205WSBQA is a 650V N-Channel GaNFET designed for high-performance power conversion applications requiring efficient switching. This device offers a continuous drain current of 35A (Tc) and a maximum power dissipation of 125W (Tc). Key electrical characteristics include a low Rds(on) of 62mOhm at 22A and 8V, and a gate charge (Qg) of 42 nC at 8V. The TPH3205WSBQA features a standard TO-247-3 package for through-hole mounting, facilitating integration into existing designs. With a junction temperature rating of 150°C and AEC-Q101 qualification, this FET is suitable for demanding automotive environments. Its GaNFET technology provides superior switching speeds and reduced losses compared to traditional silicon MOSFETs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 22A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 400 V |
| Qualification | AEC-Q101 |
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