TPH3205WSB
GANFET N-CH 650V 36A TO247-3Manufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm TPH3205WSB, a 650 V N-Channel GaNFET, offers 36A continuous drain current at 25°C (Tc) and 125W power dissipation. This through-hole component features a TO-247-3 package and a maximum Rds On of 60mOhm at 22A, 8V. Key parameters include a gate charge of 42 nC at 8V and an input capacitance of 2200 pF at 400V. The device supports a maximum gate-source voltage of ±18V and a threshold voltage of 2.6V at 700µA. Operating temperature ranges from -55°C to 175°C (TJ). This GaNFET technology is suitable for high-frequency power conversion applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 400 V |
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