TPH3202PS
GANFET N-CH 600V 9A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Transphorm TPH3202PS is a 600 V N-Channel GaNFET designed for high-efficiency power conversion applications. Featuring a low on-resistance of 350 mOhm at 5.5A and 8V Vgs, this device offers superior performance characteristics compared to traditional silicon MOSFETs. With a continuous drain current capability of 9A (Tc) and a maximum power dissipation of 65W (Tc), it is well-suited for demanding power supply designs in sectors such as data centers, industrial automation, and automotive systems. The TO-220AB package facilitates easy through-hole mounting, while the GaNFET technology enables reduced switching losses and improved thermal management. Key parameters include a gate charge of 9.3 nC (Max) at 4.5V Vgs and an input capacitance (Ciss) of 760 pF (Max) at 480V Vds. This component operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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