TPH3202PD
GANFET N-CH 600V 9A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Transphorm TPH3202PD is a GaNFET N-Channel power transistor with a Drain-Source Voltage (Vdss) of 600V. It offers a continuous drain current (Id) of 9A at 25°C and a maximum power dissipation of 65W (Tc) in a TO-220AB through-hole package. Key parameters include a typical Rds On of 350mOhm at 5.5A and 8V, and a Gate Charge (Qg) of 9.3 nC at 4.5V. Input capacitance (Ciss) is 760 pF at 480V. This component is designed for high-efficiency power conversion applications across various industries, including industrial power supplies, automotive, and consumer electronics. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
Request a Quote
Clients Also Buy
TP65H070G4PS
GANFET N-CH 650V 29A TO220
TPH3206PSB
GANFET N-CH 650V 16A TO220AB
TP65H300G4LSGB-TR
GANFET N-CH 650V 6.5A QFN8X8
