TPH3202LD
GANFET N-CH 600V 9A 4PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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The Transphorm TPH3202LD is a 600V N-channel GaNFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 9A (Tc) with a maximum on-resistance of 350mOhm @ 5.5A, 8V. Key parameters include a gate charge (Qg) of 9.3 nC @ 4.5V and input capacitance (Ciss) of 760 pF @ 480V. The TPH3202LD is packaged in a 4-PQFN (8x8) surface mount configuration, enabling compact designs. With a maximum power dissipation of 65W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for demanding power supply units, server power, industrial power, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 4-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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