TP90H180PS
GANFET N-CH 900V 15A TO220ABManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Transphorm TP90H180PS GaNFET, an N-Channel device, offers a 900V drain-source voltage and 15A continuous drain current at 25°C. This through-hole component features a low on-resistance of 205mOhm maximum at 10A, 10V, and a gate charge of 10 nC maximum at 8V. With a maximum power dissipation of 78W at 25°C and an operating temperature range of -55°C to 150°C, the TP90H180PS is housed in a TO-220AB package. This GaNFET technology is suitable for high-efficiency power conversion applications across various industries including industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 600 V |
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