TP90H050WS
GANFET N-CH 900V 34A TO247-3Manufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm GaNFET N-Channel MOSFET, part number TP90H050WS, offers 900V drain-source voltage and 34A continuous drain current at 25°C. This through-hole component features a low on-resistance of 63mOhm at 22A and 10V Vgs. With a maximum power dissipation of 119W, it is designed for high-efficiency power conversion applications. Key parameters include gate charge of 17.5 nC and input capacitance of 980 pF. The TO-247-3 package ensures robust thermal performance. This device is suitable for use in server power supplies, industrial power systems, and renewable energy inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 600 V |
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