TP65H150LSG
GANFET N-CH 650V 15A 3PQFNManufacturer: Transphorm
Categories: Single FETs, MOSFETs
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Transphorm GaNFET N-Channel power transistor, part number TP65H150LSG. This device features a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C (Tc), with a maximum power dissipation of 69W (Tc). The low on-resistance is specified as 180mOhm maximum at 10A and 10V gate-source voltage. The gate charge (Qg) is 7.1 nC maximum at 10V, and input capacitance (Ciss) is 576 pF maximum at 400V. The TP65H150LSG utilizes a 3-PQFN (8x8) surface mount package. Operating temperature ranges from -55°C to 150°C (TJ), with a maximum gate-source voltage of ±20V and threshold voltage (Vgs(th)) of 4.8V maximum at 500µA. This component is suitable for applications in power conversion, including server and industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 400 V |
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