TP65H150G4PS
GAN FET N-CH 650V TO-220Manufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
Additional Information
Series: SuperGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
Request a Quote
Clients Also Buy
TP65H050G4BS
650 V 34 A GAN FET
TP65H050G4WS
650 V 34 A GAN FET
TP65H300G4LSGB-TR
GANFET N-CH 650V 6.5A QFN8X8
