TP65H100G4LSGB-TR
Hi Volt FETsManufacturer: Transphorm
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 18.9A (Tc) 65.8W (Tc) Surface Mount 8-PQFN (8x8)
Additional Information
Series: SuperGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 1.8mA |
| Supplier Device Package | 8-PQFN (8x8) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 818 pF @ 400 V |
| Qualification | - |
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